Mitsubishi RM25TN-2H In Stock

Mitsubishi RM25TN-2H In Stock

#RM25TN-2H Mitsubishi RM25TN-2H New Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage., RM25TN-2H pictures, RM25TN-2H price, #RM25TN-2H supplier
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Email: sales@shunlongwei.com

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Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete threephase bridge circuit. Each diode is electrically insulated from the mounting base plate for easy mounting on a common heatsink with other components.
Repetitive Peak Reverse Voltage VRRM 1600 V
Non-Repetitive Peak Reverse Voltage VRSM 1700 V
Recommended AC Input Voltage EA 440 V
DC Output Current (Tb = 100°C) IO 15 A
Surge (Non-Repetitive) Forward Current (One Half Cycle at 60Hz, Peak Value) IFSM 400 A
Junction Temperature Tj -40 ~ +125 °C
Storage Temperature Tstg -40 ~ +125 °C
Operating Frequency f 1000 Hz
Maximum Mounting Torque M3.5 Mounting Screw 11 in-lb
Maximum Mounting Torque M3.5 Terminal Screw 11 in-lb
Dielectric Strength (AC 60Hz, 1 minute between terminal and base plate) Viso 2500 V
Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage.

Eupec FF150R12KE3G In Stock

#FF150R12KE3G Eupec FF150R12KE3G New IGBT Modules 1200V 150A DUAL, FF150R12KE3G pictures, FF150R12KE3G price, #FF150R12KE3G supplier
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Email: sales@shunlongwei.com

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FF150R12KE3G
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: No
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 780 W
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm
 

IGBT Modules 1200V 150A DUAL

Fuji 6MBI15F-120 In Stock

#6MBI15F-120 Fuji 6MBI15F-120 New 1200V / 15A 6 in one-package , 6MBI15F-120 pictures, 6MBI15F-120 price, #6MBI15F-120 supplier
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Email: sales@shunlongwei.com

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6MBI15F-120 Description

1200V / 15A 6 in one-package

6MBI15F-120  5.34 lbs

Target_Applications

6MBI15F-120 could be used in Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial Machines, such as Welding Machines

Features

Low Saturation Voltage Voltage Drive Variety of Power Capacity Series
1200V / 15A 6 in one-package

Mitsubishi QM200HA-H In Stock

#QM200HA-H Mitsubishi QM200HA-H New IGBT transistor module 200A/1000V/GTR/75, QM200HA-H pictures, QM200HA-H price, #QM200HA-H supplier
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Email: sales@shunlongwei.com

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QM200HA-H Features
• IC Collector current 200A
• VCEX Collector-emitter voltage 1000V
• hFE DC current gain 75
• Insulated Type
• UL Recognized
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Collector-base voltage Emitter open VCBO 600V
Collector reverse current DC (forward diode current 200A
Collector dissipation TC=25°C 1250W
Junction temperature Ti –40~+150°C
Storage temperature Tstg –40~+125°C
Weight 420g

IGBT transistor module 200A/1000V/GTR/75

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