Semikron SKM150GB128D In Stock

#SKM150GB128D Semikron SKM150GB128D New SKM150GB128D SEMIKRON Power Module, SKM150GB128D pictures, SKM150GB128D price, #SKM150GB128D supplier
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Email: sales@shunlongwei.com

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SKM150GB128D Description

Features
• N Channel, enhancement mode
• Short internal connections avoid oscillations
• Without hard mould (environmental aspects)
• Isolated copper baseplate using DCB Direct Copper Bonding Ceramic
• All electrical connections on top for easy busbaring
Typical Applications
• Switched mode power supplies
• DC servo and robot drives
• DC choppers
• Resonant and welding inverters
• AC motor drives
• Laser power supplies
• UPS equipment
• Not suitable for linear amplification
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:180W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

SKM150GB128D SEMIKRON Power Module

Infineon FS75R12KE3G In Stock

#FS75R12KE3G Infineon FS75R12KE3G New IGBT Modules 1200V 75A 3-PHASE , FS75R12KE3G pictures, FS75R12KE3G price, #FS75R12KE3G supplier
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Email: sales@shunlongwei.com

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Manufacturer: Infineon FS75R12KE3G
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 105 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: EconoPACK 3B
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 355 W
Factory Pack Quantity: 10
 

IGBT Modules 1200V 75A 3-PHASE

Mitsubishi QM30TB1-H In Stock

#QM30TB1-H Mitsubishi QM30TB1-H New Mitsubishi IGBT POWER TRANSISTOR MODULE , QM30TB1-H pictures, QM30TB1-H price, #QM30TB1-H supplier
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Email: sales@shunlongwei.com

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Options
.also available with powerfull chopper. For characteristics please refer to Inverter IGBT
1)Theatsink=25°C, unless otherwise specified
2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)
.For diagrams of the Chopper IGBT please fefer to QM30TB1-H
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1000V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector power dissipation Pc:400W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
 

Mitsubishi IGBT POWER TRANSISTOR MODULE

Infineon FS400R07A1E3 In Stock

#FS400R07A1E3 Infineon FS400R07A1E3 New Insulated Gate Bipolar Transistor 500A I(C) 650V V(BR)CES N-Channel MODULE-25, FS400R07A1E3 pictures, FS400R07A1E3 price, #FS400R07A1E3 supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: FS400R07A1E3
Pbfree Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X13
Pin Count: 25
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Case Connection: ISOLATED
Collector Current-Max (IC): 500 A
Collector-Emitter Voltage-Max: 650 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X13
Moisture Sensitivity Level: 1
Number of Elements: 6
Number of Terminals: 13
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1250 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER

Insulated Gate Bipolar Transistor 500A I(C) 650V V(BR)CES N-Channel MODULE-25

Fuji 2MBI300VB-060-50 In Stock

#2MBI300VB-060-50 Fuji 2MBI300VB-060-50 New 2MBI300VB-060-50 Fuji M274 Series IGBT module 300 A max 600 V Surface Mount, 2MBI300VB-060-50 pictures, 2MBI300VB-060-50 price, #2MBI300VB-060-50 supplier
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Email: sales@shunlongwei.com

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Maximum Continuous Collector Current 300 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Surface Mount
Package Type M274
Pin Count 7
Maximum Power Dissipation 1.36 kW
Dimensions 92 x 45 x 30mm
Height 30mm
Length 92mm
Maximum Operating Temperature +150 °C
Width 45mm

2MBI300VB-060-50 Fuji M274 Series IGBT Module 300 A max 600 V Surface Mount

Eupec FP40R12KE3G In Stock

#FP40R12KE3G Eupec FP40R12KE3G New IGBT Modules 1200V 40A PIM , FP40R12KE3G pictures, FP40R12KE3G price, #FP40R12KE3G supplier
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Email: sales@shunlongwei.com

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FP40R12KE3G
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 40 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: EconoPIM3-24
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 200 W
Factory Pack Quantity: 10

IGBT Modules 1200V 40A PIM

Eupec FF600R16KF4 In Stock

#FF600R16KF4 Eupec FF600R16KF4 New 600A/1600V/IGBT/2UIGBT Modules 1600V 600A DUAL , FF600R16KF4 pictures, FF600R16KF4 price, #FF600R16KF4 supplier
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Email: sales@shunlongwei.com

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FF600R16KF4
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1600 V
Collector-Emitter Saturation Voltage: 3.5 V
Continuous Collector Current at 25 C: 600 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 3.9 kW
Package / Case: IHM
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 38 mm
Length: 140 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 2
Width: 130 mm
 

600A/1600V/IGBT/2UIGBT Modules 1600V 600A DUAL

Infineon FP15R12YT3 In Stock

#FP15R12YT3 Infineon FP15R12YT3 New IGBT Modules N-CH 1.2KV 25A;15A/1200V/PIM, FP15R12YT3 pictures, FP15R12YT3 price, #FP15R12YT3 supplier
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Email: sales@shunlongwei.com

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Manufacturer:    Infineon  FP15R12YT3
Product Category:    IGBT Modules
RoHS:    YES
Product:    IGBT Silicon Modules
Configuration:    Array 7
Collector- Emitter Voltage VCEO Max:    1200 V
Continuous Collector Current at 25 C:    25 A
Maximum Operating Temperature:    + 125 C
Package / Case:    EASY2
Packaging:    Tray
Brand:    Infineon Technologies
Maximum Gate Emitter Voltage:    +/- 20 V
Minimum Operating Temperature:    – 40 C
Mounting Style:    Screw
Factory Pack Quantity:    20

IGBT Modules N-CH 1.2KV 25A;15A/1200V/PIM

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