Intel’s goal is to increase the density by more than 10 times in packaging, increase logic scaling by 30% to 50%, and lay out non-silicon-based semiconductors.
In the process of unremittingly advancing Moore’s Law, Intel announced key technological breakthroughs in packaging, transistors, and quantum physics. These breakthroughs are critical to advancing and accelerating computing into the next decade. At the 2021 IEEE International Electronic Devices Conference (IEDM), Intel outlined its future technology development direction, namely, through hybrid bonding (hybrid bonding) will increase the interconnect density in the package by more than 10 times, and the transistor shrinkage area will increase by 30% to 50%, major breakthroughs have been made in brand-new power devices and memory technologies. New technologies derived from new concepts in physics may redefine computing in the future.
Robert Chau, Intel’s senior academician and general manager of the component research department, said: “At Intel, research and innovation to continue to advance Moore’s Law has never stopped. Intel’s component research team shared key research breakthroughs at IEDM 2021. These breakthroughs It will bring revolutionary process technology and packaging technology to meet the industry and society’s infinite demand for powerful computing. This is the result of the unremitting efforts of our best scientists and engineers. They will continue to be at the forefront of technological innovation. Continue to continue Moore’s Law.”
Moore’s Law satisfies the needs of every generation of technology, from mainframe computers to mobile phones, and keeps pace with computing innovation. Today, as we enter a new era of computing with infinite data and artificial intelligence, this evolution continues.
Continuous innovation is the cornerstone of Moore’s Law. Intel’s component research team is committed to innovating in three key areas: first, to provide more transistor core scaling technology; second, to improve silicon-based semiconductors in the areas of power devices and memory gain Performance; Third, explore new concepts in physics to redefine calculations. Many innovative technologies that break through the barriers of Moore’s Law and appear in current products are derived from the research work of the component research team, including strained silicon, high-K-metal gate technology, FinFET transistors, RibbonFETs, as well as EMIB and Foveros Direct Packaging technology innovations included.
The breakthrough progress disclosed at IEDM 2021 shows that Intel is continuing to advance Moore’s Law through the exploration of the following three areas, and extend it to 2025 and beyond.
1. In order to provide more transistors in future products, Intel is conducting key research on core scaling technology:
Intel researchers outlined the solutions to the design, process technology, and assembly problems in hybrid bonding interconnects, hoping to increase the interconnect density by more than 10 times in the package. In the Intel Accelerated Innovation: Process Technology and Packaging Technology online press conference in July this year, Intel announced plans to launch Foveros Direct to achieve bump pitches below 10 microns and increase the interconnect density of 3D stacks by an order of magnitude. In order for the ecosystem to benefit from advanced packaging, Intel also called for the establishment of new industry standards and testing procedures to make the hybrid bonding chiplet ecosystem possible.
Looking ahead to its GAA RibbonFET (Gate-All-Around RibbonFET) technology, Intel is leading the upcoming post-FinFET era. By stacking multiple (CMOS) transistors, it can achieve up to 30% to 50% logic scaling improvement. More transistors can be accommodated in millimeters to continue to advance the development of Moore’s Law.
Intel is also paving the way for Moore’s Law to enter the Emmy era. Its forward-looking research shows how Intel overcomes the limitations of traditional silicon channels and uses new materials with a thickness of only a few atoms to make transistors on each chip. Increase the number of millions of transistors. In the next ten years, more powerful calculations will be realized.
2. Intel injects new features into silicon:
By integrating GaN-based power devices and silicon-based CMOS on a 300mm wafer for the first time, a more efficient power supply technology has been realized. This creates conditions for the CPU to provide low-loss, high-speed power transmission, while also reducing motherboard components and space.
Another development is the use of new ferroelectric materials as a viable solution for the next generation of embedded DRAM technology. This industry-leading technology can provide greater memory resources and low-latency read and write capabilities to solve increasingly complex problems faced by computing applications ranging from games to artificial intelligence.
3. Intel is committed to greatly improving the quantum computing performance of silicon-based semiconductors, and is also developing new devices that can perform high-efficiency and low-power computing at room temperature. In the future, technologies derived from new physics concepts will gradually replace traditional MOSFET transistors:
At IEDM 2021, Intel demonstrated the world’s first normal temperature magnetoelectric spin orbit (MESO) logic device, which indicates that it is possible to create new transistors based on nanoscale magnet devices in the future.
Intel and the Belgian Microelectronics Research Center (IMEC) have made progress in the research of spintronic materials, bringing device integration research close to realizing the full practicality of spintronic devices.
Intel also demonstrated the complete 300mm qubit manufacturing process flow. This quantum computing process is not only sustainable in scaling down, but also compatible with CMOS manufacturing, which determines the direction of future research.
About Intel’s component research department: Intel’s component research department is the research team in Intel’s technology research and development department, responsible for providing revolutionary process technology and packaging technology solutions to advance Moore’s Law and realize Intel’s products and services. The Intel component research team has established an internal partnership with the company’s business units to predict future demand. At the same time, the team has also established cooperative relationships with external parties, including government agency research laboratories, industry associations, university research groups, and various suppliers to maintain the integrity of Intel’s research and development channels.
For more information, please visit: 3D stacked transistors: Increase area by stacking upwards (video) | Foveros Direct: Advanced packaging technology will continue Moore’s Law (video) | Intel Component Research Group invents revolutionary process technology and packaging technology (video)
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